bas16d www.vishay.com vishay semiconductors rev. 1.4, 13-may-13 1 document number: 85723 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal fast switching diode mechanical data case: sod-123 weight: approx. 10.3 mg packaging codes/options: 18/10k per 13 " reel (8 mm tape), 10k/box 08/3k per 7 " reel (8 mm tape), 15k/box features ? silicon epitaxial planar diode ? fast switching diode ? aec-q101 qualified ? base p/n-e3 - rohs-compliant, commercial grade ? base p/n-he3 - rohs-compliant, aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ? ? ? ? ? ? ? ? note (1) valid provided electrodes are kept at ambient temperature parts table part ordering code internal construction type marking remarks bas16d bas16d-e3-08 or bas16d-e3-18 single diode a6 tape and reel bas16d-he3-08 or bas16d-he3-18 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 75 v repetitive peak reverse voltage v rrm 100 v forward current (continuous) i f 250 ma non-repetitive peak forward current t = 1 s i fsm 2a t = 1 ms i fsm 1a t = 1 s i fsm 0.5 a power dissi pation (1) p tot 350 mw thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to ambient air (1) r thja 375 k/w maximum junction temperature t j 150 c storage temperature range (1) t stg - 65 to + 150 c operating temperature range t op - 55 to + 150 c
bas16d www.vishay.com vishay semiconductors rev. 1.4, 13-may-13 2 document number: 85723 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - forward characteristics fig. 2 - dynamic forward resistance vs. forward current fig. 3 - admissible power dissipation vs. ambient temperature fig. 4 - relative capacitance vs. reverse voltage electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 1 ma v f 0.715 v i f = 10 ma v f 0.855 v i f = 50 ma v f 1v i f = 150 ma v f 1.25 v leakage current v r = 25 v, t j = 150 c i r 30 a v r = 75 v i r 1a v r = 75 v, t j = 150 c i r 50 a diode capacitance v r = 0; f = 1 mhz c d 2pf reverse recovery time i f = 10 ma, i r = 10 ma, i r = 1 ma, r l = 100 ? t rr 6ns 18105 i f (ma) v f ( v ) t j = 100 c t j = 25 c 10 - 2 10 - 1 10 2 10 3 1 10 12 0 17438 f = 1 khz t j = 25 c i f (ma) r f ( ) 10 10 2 10 3 10 4 10 -2 10 -1 110 2 10 2 5 2 5 2 5 2 5 18186 mw 500 400 300 200 0 0 100 200 c t amb p tot 100 17440 v r (v) 0.7 0.8 0.9 1.0 1.1 f = 1 mhz t j = 25 c 2 08 6 410 c d (v r ) c d (0 v)
bas16d www.vishay.com vishay semiconductors rev. 1.4, 13-may-13 3 document number: 85723 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - leakage current vs. junction temperature fig. 6 - admissible repetitive peak forw ard current vs. pulse duration 17441 t j (c) i r (na) 10 10 2 10 3 10 4 100 200 2 5 2 5 2 5 2 5 v r = 20 v 1 0 18106 i t t i frm i frm t p t p v = t p /t t = 1/f p a v = 0 0.1 0.2 0.5 100 10 1 0.1 5 4 3 2 5 4 3 2 5 4 3 2 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 s 25 25 25 25 25 25
bas16d www.vishay.com vishay semiconductors rev. 1.4, 13-may-13 4 document number: 85723 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): sod-123 0.1 (0.004) max. 2.85 (0.112) 2.55 (0.100) 3.85 (0.152) 3.55 (0.140) 1.7 (0.067) 1.40 (0.055) mo u nting pad layo u t 2.5 (0.098) 0.85 (0.033) 0.85 (0.033) 0.85 (0.033) cathode b ar 0.65 (0.026) 0.45 (0.018) 0.10 (0.004) 1 (0.039) 0.15 (0.006) 1.35 (0.053) 0.2 (0.008) 0 to 8 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. re v . 4 - date: 24. sep. 2009 doc u ment no.: s8- v -3910.01-001 (4) 17432
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